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Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects

(AGENPARL) – London (United Kingdom), mar 22 gennaio 2019 RSC Adv., 2019, 9,DOI: 10.1039/C8RA10112D, Paper Open Access &nbsp This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.Sih-Sian Li, Yan-Kuin SuThe depth-profiling XPS spectra results are strong evidence that the resistive switching effects are applicable to oxygen vacancy-based conductive mechanisms.The content of this RSS Feed (c) The Royal Society of Chemistry

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