(AGENPARL) – LONDON (UNITED KINGDOM), ven 11 settembre 2020
The γ-ray total dose radiation effects on energy storage density and phase transition of antiferroelectric-like (AFE-like) Al-doped HfO2(HfAlO) thin films were investigated. The energy storage density (ESD) properties and the wake-up behavior during field cycling of the AFE HfAlO thin films were quantified before and after the radiation. The efficiency of the AFE-like thin films for energy storage presented a little decrease with the increase total dose from 200 krad (Si) to 5 Mrad (Si) due to the radiation-induced trapped defects at the interfaces of HfAlO/TiN. The J-E, C-V, and εr-f characteristics of AFE-like HfAlO thin films were measured before and after the radiation at the same electrodes, which further confirmed that the ferroelectricity of the thin films has reduced due to the radiation oxide trapped defects. Interestingly, an enhanced wake-up behavior for AFE-like HfAlO thin films has been found after the radiation, which indicated that the transition from antiferroelectric phase to ferroelectric phase has been accelerated by the increasing radiation-induced defects.
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